Transformation and detwinning induced electrical resistance variations in NiTiCu

Transformation and detwinning induced electrical resistance variations in NiTiCu

Utilizing electrical resistance measurements in combination with strain observations on single crystals, it was possible to distinguish the austenite to martensite transformation from the detwinning of the martensite behavior during deformation of NiTiCu shape memory alloys. It was found that the electrical resistance change associated with the detwinning of the martensite variants was as high ...

patterns and variations in native and non-native interlanguage pragmatic rating: effects of rater training, intercultural proficiency, and self-assessment

although there are studies on pragmatic assessment, to date, literature has been almost silent about native and non-native english raters’ criteria for the assessment of efl learners’ pragmatic performance. focusing on this topic, this study pursued four purposes. the first one was to find criteria for rating the speech acts of apology and refusal in l2 by native and non-native english teachers...

Detwinning in NiTi Alloys

This work focuses on the stress-induced transformation in solutionized and overaged single-crystal NiTi alloys. The potential role of detwinning on the recoverable strains was investigated both theoretically and also with temperature-cycling experiments. The detwinning is the growth of one variant within a martensite in expense of the other. It is shown that the experimental recoverable strains...

compactifications and representations of transformation semigroups

this thesis deals essentially (but not from all aspects) with the extension of the notion of semigroup compactification and the construction of a general theory of semitopological nonaffine (affine) transformation semigroup compactifications. it determines those compactification which are universal with respect to some algebric or topological properties. as an application of the theory, it is i...

Bending induced electrical response variations in ultra-thin flexible chips and device modeling